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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10615032 B1

PDFFull Text
Date of Patent:
Apr. 07, 2020

Filed:

Jan. 22, 2019

Semiconductor device manufacturing method

Applicant:

Kyocera Corporation, Kyoto-shi, Kyoto, JP;

Inventor:

Masahiro Araki, Kanzaki, JP;

Assignee:

Kyocera Corporation, Kyoto, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Marvin Payen

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01); C30B 29/40 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); C30B 29/406 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/02507 (2013.01); H01L 21/02576 (2013.01); H01L 21/02642 (2013.01); H01L 21/02647 (2013.01); H01L 21/02664 (2013.01); H01L 21/0337 (2013.01); H01L 21/2007 (2013.01); H01L 21/02579 (2013.01);
Abstract

A semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate having a surface layer at least made of semiconductor; forming a mask pattern having a plurality of openings on the surface layer using materials free of semiconductor vapor-phase growth; forming a brittle portion in each opening by a vapor-phase growth process; forming crystal growth-derived layer on the mask pattern by a vapor-phase growth process by growth of semiconductor crystals on a surface of the brittle portion ; and separating, at brittle portion, a crystal growth-derived layer from substrate.

Find Patent Forward Citations

Araki, Masahiro. (2020). Semiconductor device manufacturing method (U.S. Patent No. 10615032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10615032

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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