The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Jul. 24, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Christoph Kadow, Gauting, DE;
Uwe Seidel, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 25/065 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02334 (2013.01); H01L 21/268 (2013.01); H01L 23/66 (2013.01); H01L 24/14 (2013.01); H01L 25/0657 (2013.01); H01L 2223/6605 (2013.01);
Abstract
A method for manufacturing a device includes: providing a semiconductor substrate having an RF-device; providing a BEOL-layer stack on the first main surface of the semiconductor substrate; attaching a carrier structure to a first main surface of the BEOL-layer stack; removing a lateral portion of the semiconductor substrate which laterally adjoins the device region to expose a lateral portion of the second main surface of the BEOL-layer stack; and opening a contacting region of the BEOL-layer stack at the lateral portion of second main surface of the BEOL-layer stack.