The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Jun. 01, 2016
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Shota Iwahata, Kyoto, JP;

Masayuki Otsuji, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/306 (2006.01); H01L 21/687 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); H01L 21/02052 (2013.01); H01L 21/02307 (2013.01); H01L 21/02343 (2013.01); H01L 21/6715 (2013.01); H01L 21/67023 (2013.01); H01L 21/67028 (2013.01); H01L 21/67051 (2013.01); H01L 21/67126 (2013.01); H01L 21/68764 (2013.01); B81C 1/00928 (2013.01); H01L 21/02063 (2013.01);
Abstract

A substrate processing method includes a liquid film forming step of forming a liquid film of an organic solvent with which a whole area of an upper surface of a substrate is covered in order to replace a processing liquid existing on the upper surface with an organic solvent liquid, a thin film holding step of thinning the liquid film of the organic solvent by rotating the substrate at a first high rotational speed while keeping surroundings of the whole area of the upper surface in an atmosphere of an organic solvent vapor and holding a resulting thin film of the organic solvent on the upper surface, and a thin-film removing step of removing the thin film from the upper surface after the thin film holding step, and the thin-film removing step includes a high-speed rotation step of rotating the substrate at a second high rotational speed.


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