The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Feb. 28, 2017
Applicant:

The Regents of the University of Michigan, Ann Arbor, MI (US);

Inventors:

Khalil Najafi, Ann Arbor, MI (US);

Jae Yoong Cho, Ann Arbor, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01C 19/5691 (2012.01); B81C 1/00 (2006.01); B81C 3/00 (2006.01); H03H 3/007 (2006.01); H03H 3/013 (2006.01); H03H 9/46 (2006.01);
U.S. Cl.
CPC ...
G01C 19/5691 (2013.01); B81C 1/0019 (2013.01); B81C 1/00182 (2013.01); B81C 1/00626 (2013.01); B81C 3/002 (2013.01); H03H 3/0072 (2013.01); H03H 3/013 (2013.01); H03H 9/462 (2013.01); B81B 2201/0242 (2013.01);
Abstract

Three-dimensional microstructure devices having substantially perfect alignment and leveling of a three-dimensional microstructure with respect to a substrate having a plurality of discrete electrodes and relating fabricating methods are disclosed. Seed layers are deposited onto the discrete electrodes of the substrate, and the three-dimensional microstructure is bonded adjacent to the seed layers. A substantially uniform sacrificial layer is deposited onto exposed surfaces of the three-dimensional microstructure. A plurality of first gaps exists between the seed layers and corresponding regions of the sacrificial layer. Conductive layers are deposited to fill the first gaps. The sacrificial layer is dissolved to create a second plurality of gaps between the conductive layers and the corresponding regions of the three-dimensional microstructure. The second gaps are substantially uniform.


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