The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Jun. 25, 2015
Applicant:

Mitsui Mining & Smelting Co., Ltd., Tokyo, JP;

Inventors:

Makoto Ozawa, Tokyo, JP;

Isao Ando, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C04B 41/80 (2006.01); C04B 37/02 (2006.01); H01J 37/34 (2006.01); C04B 35/457 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3407 (2013.01); C04B 35/457 (2013.01); C04B 37/021 (2013.01); C04B 37/023 (2013.01); C04B 41/80 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); H01J 37/3423 (2013.01); H01J 37/3426 (2013.01); H01J 37/3429 (2013.01); H01J 37/3491 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2237/12 (2013.01); C04B 2237/34 (2013.01); C04B 2237/402 (2013.01); C04B 2237/403 (2013.01); C04B 2237/406 (2013.01); C04B 2237/407 (2013.01); C04B 2237/52 (2013.01);
Abstract

Provided is a sputtering target having extremely low occurrence of arcing or nodules, and a method for manufacturing such a sputtering target. A flat plate-shaped or cylindrical target material () is obtained by processing a material composed of an oxide sintered body. In doing so, a grindstone having a specified grade is used to perform rough grinding of a surface of the material that will become a sputtering surface () one or more times in accordance to the grade of the grindstone, after which zero grinding is performed one or more times so that the surface roughness of the sputtering surface () has an arithmetic mean roughness Ra of 0.9 μm or more, a maximum height Rz of 10.0 μm or less, and Rzroughness of 7.0 μm or less. A sputtering target () is obtained by bonding the obtained target material () to a backing body () by way of a bonding layer ().


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