The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Feb. 01, 2017
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Kumiko Yamazaki, Tokyo, JP;
Hiroshi Chihara, Tokyo, JP;
Yuki Nagamine, Tokyo, JP;
Junichi Yamazaki, Tokyo, JP;
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/58 (2006.01); H01G 4/33 (2006.01); H01B 3/10 (2006.01); C04B 35/465 (2006.01); H01B 3/02 (2006.01); H01G 4/08 (2006.01); C04B 35/495 (2006.01); C04B 35/462 (2006.01); C04B 35/50 (2006.01); C04B 35/626 (2006.01); C04B 35/634 (2006.01); C04B 35/64 (2006.01); H01G 4/12 (2006.01); H01L 49/02 (2006.01); H01G 4/008 (2006.01);
U.S. Cl.
CPC ...
C04B 35/58007 (2013.01); C04B 35/462 (2013.01); C04B 35/465 (2013.01); C04B 35/495 (2013.01); C04B 35/50 (2013.01); C04B 35/58014 (2013.01); C04B 35/6262 (2013.01); C04B 35/6264 (2013.01); C04B 35/62655 (2013.01); C04B 35/62695 (2013.01); C04B 35/63416 (2013.01); C04B 35/64 (2013.01); H01B 3/02 (2013.01); H01B 3/10 (2013.01); H01G 4/085 (2013.01); H01G 4/1209 (2013.01); H01G 4/1227 (2013.01); H01G 4/1254 (2013.01); H01G 4/33 (2013.01); H01L 28/55 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3208 (2013.01); C04B 2235/3213 (2013.01); C04B 2235/3215 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3251 (2013.01); C04B 2235/3258 (2013.01); C04B 2235/3895 (2013.01); C04B 2235/602 (2013.01); C04B 2235/606 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6583 (2013.01); C04B 2235/768 (2013.01); C04B 2235/77 (2013.01); C04B 2235/79 (2013.01); C04B 2235/96 (2013.01); H01G 4/008 (2013.01); H01L 28/60 (2013.01);
Abstract
A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan δ. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n≥0.7.