The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Jun. 21, 2018
Applicant:

Furukawa Electric Co., Ltd., Tokyo, JP;

Inventors:

Yutaka Ohki, Tokyo, JP;

Masafumi Tajima, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01S 5/028 (2006.01); H01S 5/16 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/028 (2013.01); H01S 5/0285 (2013.01); H01S 5/16 (2013.01); H01S 5/343 (2013.01);
Abstract

A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.


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