The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Apr. 25, 2018
Tdk Corporation, Tokyo, JP;
Takekazu Yamane, Tokyo, JP;
Junichiro Urabe, Tokyo, JP;
Tsuyoshi Suzuki, Tokyo, JP;
Atsushi Shimura, Tokyo, JP;
TDK CORPORATION, Tokyo, JP;
Abstract
A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.