The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
May. 09, 2018
Genesis Photonics Inc., Tainan, TW;
Yi-Ru Huang, Tainan, TW;
Tung-Lin Chuang, Tainan, TW;
Chih-Ming Shen, Tainan, TW;
Sheng-Tsung Hsu, Tainan, TW;
Kuan-Chieh Huang, New Taipei, TW;
Jing-En Huang, Tainan, TW;
Shao-Ying Ting, Tainan, TW;
Genesis Photonics Inc., Tainan, TW;
Abstract
Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.