The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Sep. 19, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventor:
Phanikumar Konkapaka, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01); H03B 5/12 (2006.01); H01L 29/49 (2006.01); H01L 27/06 (2006.01); H04B 1/40 (2015.01);
U.S. Cl.
CPC ...
H01L 29/93 (2013.01); H01L 27/0629 (2013.01); H01L 29/4966 (2013.01); H03B 5/1212 (2013.01); H03B 5/1228 (2013.01); H03B 5/1265 (2013.01); H03B 2200/004 (2013.01); H03B 2200/009 (2013.01); H04B 1/40 (2013.01);
Abstract
An integrated circuit formed with a process that enables multiple types of gate stacks improves a quality factor of metal oxide semiconductor (MOS) varactors at the device level. In one instance, the integrated circuit includes multiple first type transistors having a first gate stack with a first resistance and multiple second type transistors having a second gate stack with a second resistance that is higher than the first resistance. The integrated circuit also includes a metal oxide semiconductor varactor having the first gate stack with the first resistance.