The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Dec. 19, 2018
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Stefan Tegen, Dresden, DE;
Dirk Manger, Dresden, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 29/739 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 21/26513 (2013.01); H01L 21/823481 (2013.01); H01L 21/823487 (2013.01); H01L 29/0634 (2013.01); H01L 29/1033 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/66348 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/0696 (2013.01); H01L 29/4238 (2013.01); H01L 29/456 (2013.01);
Abstract
A method for forming a semiconductor device includes forming a body implant region of a vertical field effect transistor arrangement in a semiconductor substrate and forming a plurality of compensation regions in the semiconductor substrate after forming the body implant region of the vertical field effect transistor arrangement. Further embodiments of methods for forming a semiconductor device are described.