The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Jul. 25, 2018
Applicant:

Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;

Inventors:

Sungjoo Lee, Seongnam-si, KR;

Jingyuan Jia, Suwon-si, KR;

Sumin Jeon, Suwon-si, KR;

Jin-Hong Park, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/47 (2006.01); H01L 29/786 (2006.01); H01L 31/0352 (2006.01); H01L 29/78 (2006.01); H01L 31/108 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4916 (2013.01); H01L 29/24 (2013.01); H01L 29/47 (2013.01); H01L 29/66356 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7391 (2013.01); H01L 29/7839 (2013.01); H01L 29/7846 (2013.01); H01L 29/78606 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H01L 31/03529 (2013.01); H01L 31/108 (2013.01); H01L 29/778 (2013.01);
Abstract

The present disclosure provides a multi-functional electronic device with a black phosphorous-based single channel, wherein the device comprises: a black phosphorous-based single channel layer including a horizontal arrangement of a first semiconductor region and a second semiconductor region to define a horizontal junction therebetween, wherein the second semiconductor region has a lower hole-carrier density than the first semiconductor region; a first electrode connected to the first semiconductor region; a second electrode spaced from the first electrode and connected to the second semiconductor region; an ionic gel layer disposed on the first semiconductor region; and a gate electrode for receiving a gate voltage to generate an electric field in the channel layer.


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