The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Dec. 06, 2018
Applicant:

SK Hynix System Ic Inc., Chungcheongbuk-do, KR;

Inventor:

Kwang Il Choi, Chungcheongbuk-do, KR;

Assignee:

SK hynix system ic Inc., Chungcheongbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11524 (2017.01); G11C 16/04 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/24 (2006.01); G11C 16/14 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); G11C 16/0433 (2013.01); H01L 29/66825 (2013.01); H01L 29/7885 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract

A nonvolatile memory device includes a plurality of unit cells. Each of the plurality of unit cells includes a first active region disposed in a substrate to extend in a first direction, a floating gate extending in a second direction to cross over the first active region, a first selection gate disposed to be adjacent to a first side surface of the floating gate to cross over the first active region, a second selection gate disposed to be adjacent to a second side surface of the floating gate opposite to the first selection gate to cross over the first active region, a first dielectric layer disposed between the floating gate and the first selection gate, and a second dielectric layer disposed between the floating gate and the second selection gate.


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