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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10607986 B1

PDFFull Text
Date of Patent:
Mar. 31, 2020

Filed:

Mar. 29, 2018

Single capacitor functioning as an rc filter

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Lin Li, Beijing, CN;

Xiaoming Li, Beijing, CN;

Xianhui Dong, Beijing, CN;

Weibing Jing, Beijing, CN;

Assignee:

TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);

Attorneys:

Rose Alyssa Keagy

Charles A. Brill

Frank D. Cimino

Primary Examiner:

Michelle Mandala

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8238 (2006.01); H01L 49/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3205 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01); H03H 7/06 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/94 (2006.01); H03F 3/45 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/26513 (2013.01); H01L 21/28035 (2013.01); H01L 21/32053 (2013.01); H01L 21/32055 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/4916 (2013.01); H01L 29/66181 (2013.01); H01L 29/94 (2013.01); H03F 3/45475 (2013.01); H03H 7/06 (2013.01); H01L 21/0262 (2013.01); H01L 21/28525 (2013.01); H01L 21/32137 (2013.01); H01L 27/0635 (2013.01); H03F 3/45179 (2013.01); H03F 2200/165 (2013.01); H03F 2200/267 (2013.01); H03F 2203/45156 (2013.01); H03F 2203/45526 (2013.01);
Abstract

An IC includes an RC filter, a doped layer under a first dielectric layer, a polysilicon layer on the first dielectric layer providing a polysilicon plate for a capacitor of the filter, and gate(s) for MOSFET(s). A second dielectric layer is on the polysilicon plate. An input contact is on one end of the polysilicon plate and an output contact is on the opposite end. A metal layer includes metal providing contact to at least input contact and metal providing contact to the output contact. Analog circuitry includes the MOSFET having an I/O node coupled to the RC filter.

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