The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Jun. 22, 2018
Applicant:

Multibeam Corporation, Santa Clara, CA (US);

Inventors:

Kevin M. Monahan, Cupertino, CA (US);

Theodore A. Prescop, San Jose, CA (US);

Michael C. Smayling, Fremont, CA (US);

David K. Lam, Saratoga, CA (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); C23C 14/48 (2006.01); C23C 16/04 (2006.01); C23C 16/48 (2006.01); H01J 37/05 (2006.01); H01J 37/06 (2006.01); H01J 37/08 (2006.01); H01J 37/22 (2006.01); H01J 37/30 (2006.01); H01L 21/02 (2006.01); H01L 21/26 (2006.01); H01L 21/66 (2006.01); H01J 37/244 (2006.01); H01J 37/304 (2006.01); H01J 37/305 (2006.01); H01J 37/317 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); B81C 1/00373 (2013.01); C23C 14/48 (2013.01); C23C 16/047 (2013.01); C23C 16/48 (2013.01); C23C 16/486 (2013.01); C23C 16/487 (2013.01); H01J 37/05 (2013.01); H01J 37/06 (2013.01); H01J 37/08 (2013.01); H01J 37/228 (2013.01); H01J 37/244 (2013.01); H01J 37/30 (2013.01); H01J 37/304 (2013.01); H01J 37/305 (2013.01); H01J 37/3053 (2013.01); H01J 37/3056 (2013.01); H01J 37/3172 (2013.01); H01J 37/3174 (2013.01); H01J 37/3177 (2013.01); H01J 37/3178 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/26 (2013.01); H01L 21/308 (2013.01); H01L 21/3085 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 22/26 (2013.01); B81C 2201/0143 (2013.01); B81C 2201/0188 (2013.01); H01J 2237/004 (2013.01); H01J 2237/0635 (2013.01); H01J 2237/1501 (2013.01); H01J 2237/24592 (2013.01); H01J 2237/30466 (2013.01); H01J 2237/30472 (2013.01); H01J 2237/3174 (2013.01); H01J 2237/31708 (2013.01); H01J 2237/31732 (2013.01); H01J 2237/31735 (2013.01); H01J 2237/31737 (2013.01); H01J 2237/31749 (2013.01);
Abstract

Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.


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