The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Sep. 06, 2017
Applicants:

Bnnt, Llc, Newport News, VA (US);

Jefferson Science Associates, Llc, Newport News, VA (US);

Inventors:

Kevin C. Jordan, Newport News, VA (US);

Thomas G. Dushatinski, Chesapeake, VA (US);

Michael W. Smith, Newport News, VA (US);

Jonathan C. Stevens, Williamsburg, VA (US);

R. Roy Whitney, Newport News, VA (US);

Assignee:

BNNT, LLC, Newport News, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 63/06 (2006.01); H05H 6/00 (2006.01); H01S 3/00 (2006.01); H01S 3/16 (2006.01); G21K 5/00 (2006.01); H05G 2/00 (2006.01); H01J 63/02 (2006.01); H05H 9/00 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01J 63/06 (2013.01); G21K 5/00 (2013.01); H01J 63/02 (2013.01); H01S 3/00 (2013.01); H01S 3/169 (2013.01); H05G 2/00 (2013.01); H05H 6/00 (2013.01); B82Y 20/00 (2013.01); H05H 9/00 (2013.01);
Abstract

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.


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