The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Jan. 20, 2019
Applicant:

City Labs, Inc., Homestead, FL (US);

Inventor:

Peter Cabauy, Miami, FL (US);

Assignee:

City Labs, Inc., Miami, FL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G21H 1/00 (2006.01); G21H 1/06 (2006.01); H01L 31/0232 (2014.01); H01L 31/0304 (2006.01); H01L 31/18 (2006.01); H01L 31/115 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
G21H 1/06 (2013.01); H01L 31/02161 (2013.01); H01L 31/02327 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/115 (2013.01); H01L 31/184 (2013.01); H01L 31/1844 (2013.01); H01L 31/1892 (2013.01);
Abstract

A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.


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