The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Dec. 16, 2016
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Yasuo Kanda, Kanagawa, JP;

Yuji Torige, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 14/00 (2006.01); G11C 11/16 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0081 (2013.01); G11C 11/161 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

A semiconductor circuit of the disclosure includes a first circuit that is able to generate, on the basis of a voltage at a first node, an inverted voltage of the voltage at the first node, and apply the inverted voltage to a second node, a second circuit that is able to generate, on the basis of a voltage at the second node, an inverted voltage of the voltage at the second node, and apply the inverted voltage to the first node, a first transistor that is turned ON to couple the first node to a third node, a second transistor that is turned ON to supply a first direct-current voltage to the third node, and a first storage section that is coupled to the third node and includes a first storage device that is able to take a first resistance state or a second resistance state.


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