The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2020

Filed:

Feb. 17, 2015
Applicant:

H2scan Corporation, Valencia, CA (US);

Inventors:

Vikas Lakhotia, Valencia, CA (US);

An T. Nguyen Le, Stevenson Ranch, CA (US);

G. Jordan Maclay, Richland Center, WI (US);

Assignee:

H2Scan Corporation, Valencia, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 33/00 (2006.01); G01N 27/04 (2006.01); G01N 27/12 (2006.01); G01N 27/22 (2006.01);
U.S. Cl.
CPC ...
G01N 33/005 (2013.01); G01N 27/046 (2013.01); G01N 27/12 (2013.01); G01N 27/228 (2013.01);
Abstract

A method for measuring hydrogen concentration in a gas includes exposing a PdNi alloy thin-film gas sensor to the gas, alternately controlling the temperature of the PdNi alloy thin-film gas sensor between a first temperature for a first period of time and a second temperature for a second period of time while the PdNi alloy thin-film sensor is exposed to the gas, continuously monitoring the resistance of the PdNi alloy thin-film gas sensor during the first and second periods of time, and calculating the hydrogen concentration as a function of a transient in the resistance of the PdNi alloy thin-film sensor measured at a time that the temperature transitions between the first temperature and the second temperature.


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