The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2020
Filed:
Jul. 25, 2018
Boe Technology Group Co., Ltd., Beijing, CN;
Chengdu Boe Optoelectronics Technology Co., Ltd., Chengdu, CN;
Cheng Zhou, Beijing, CN;
Zhilong Yuan, Beijing, CN;
Xiaodong Yang, Beijing, CN;
Chunpeng Zhang, Beijing, CN;
Fei Li, Beijing, CN;
Yan Hu, Beijing, CN;
Hongguang Yuan, Beijing, CN;
Chengshih Huang, Beijing, CN;
Guowei Su, Beijing, CN;
Yu Zhang, Beijing, CN;
Zubin Lv, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Chengdu BOE Optoelectronics Technology Co., Ltd., Chengdu, CN;
Abstract
The disclosure discloses a method and apparatus for measuring a size of a crystal grain, and a method for fabricating a poly-silicon thin film. The method for measuring the size of the crystal grain includes: obtaining a grain morphology image of a crystalline region of a crystal, and drawing a grain interface diagram according to the grain morphology image; measuring at least one crystal grain in the grain interface diagram, and determining a transverse size and a longitudinal size of each measured crystal grain; and determining a transverse size and a longitudinal size of a crystal grain of the crystal according to the transverse size and the longitudinal size of each measured crystal grain.