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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10604405 B1

PDFFull Text
Date of Patent:
Mar. 31, 2020

Filed:

Apr. 06, 2017

Forming a microelectromechanical systems (mems) device using silicon-on-nothing and epitaxy

Applicant:

Infineon Technologies Dresden Gmbh, Dresden, DE;

Inventor:

Thoralf Kautzsch, Dresden, DE;

Assignee:

Infineon Technologies Dresden GmbH, Dresden, DE;

Attorney:

Harrity & Harrity, LLP

Primary Examiner:

Moin M Rahman

Int. Cl.
CPC ...
H01L 21/20 (2006.01); B81C 1/00 (2006.01); G01C 19/5783 (2012.01); H04R 19/00 (2006.01); B81B 3/00 (2006.01); G01S 7/481 (2006.01); G01P 15/125 (2006.01); G01P 15/08 (2006.01); H04R 31/00 (2006.01); G01C 19/00 (2013.01); G01P 15/00 (2006.01); H04R 19/04 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00158 (2013.01); B81B 3/0078 (2013.01); B81C 1/00103 (2013.01); B81C 1/00182 (2013.01); G01C 19/5783 (2013.01); G01S 7/4811 (2013.01); H04R 19/005 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0136 (2013.01); B81C 2201/013 (2013.01); B81C 2201/014 (2013.01); B81C 2201/0116 (2013.01); B81C 2201/0142 (2013.01); B81C 2203/0728 (2013.01); G01C 19/00 (2013.01); G01P 15/00 (2013.01); G01P 15/0802 (2013.01); G01P 15/125 (2013.01); H04R 19/04 (2013.01); H04R 31/00 (2013.01); H04R 2201/003 (2013.01);
Abstract

A method for forming a microelectromechanical systems (MEMS) device may include performing a first silicon-on-nothing process to form a first cavity in a substrate. The method may include depositing an epitaxial layer on a surface of the substrate. The method may include performing a second silicon-on-nothing process to form a second cavity in the epitaxial layer. The method may include exposing the first cavity and the second cavity by removing a portion of the substrate and the epitaxial layer.

Find Patent Forward Citations

Kautzsch, Thoralf. (2020). Forming a microelectromechanical systems (mems) device using silicon-on-nothing and epitaxy (U.S. Patent No. 10604405). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10604405

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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