The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Feb. 07, 2017
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Atsushi Miki, Ibaraki, JP;

Kazuki Kanmuri, Ibaraki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H05K 3/46 (2006.01); H05K 1/09 (2006.01); H05K 1/02 (2006.01); H05K 3/06 (2006.01); H05K 3/10 (2006.01); H05K 1/03 (2006.01); H05K 3/02 (2006.01);
U.S. Cl.
CPC ...
H05K 3/4644 (2013.01); H05K 1/028 (2013.01); H05K 1/09 (2013.01); H05K 3/06 (2013.01); H05K 1/0393 (2013.01); H05K 3/022 (2013.01); H05K 3/108 (2013.01); H05K 2201/032 (2013.01); H05K 2201/0338 (2013.01); H05K 2201/0355 (2013.01); H05K 2201/05 (2013.01); H05K 2203/0502 (2013.01);
Abstract

A laminate for printed wiring board is used in a method of manufacturing printed wiring boards that includes a process of forming a circuit by any one of a semi-additive method, a partly additive method, a modified semi-additive method, and an embedding method. The laminate includes an insulating resin substrate, a metal layer 1 and a metal layer 2 in this order. When a cross section that is parallel to the thickness direction of the laminate is processed by means of ion milling and the cross sections of the metal layer 1 and the metal layer 2 were observed with EBSD, each of the metal layer 1 and the metal layer 2 has one or plural crystal grain(s) at the processed cross section, and an area ratio of the total area of crystal grains of which a difference in angle of the <100> crystal direction from a perpendicular of the processed cross section is 15° or less from among the one or plural crystal grains to the total area of the plural crystal grains was 15% or higher but less than 97% in the metal layer 1 and the metal layer 2.


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