The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Nov. 30, 2017
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, Hubei, CN;

Inventors:

Pinquan Xu, Hubei, CN;

Yuanfu Liu, Hubei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01); G02F 1/1362 (2006.01); G09G 3/3225 (2016.01); G09G 3/36 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); G02F 1/136204 (2013.01); H01L 27/0266 (2013.01); H01L 27/0296 (2013.01); G09G 3/3225 (2013.01); G09G 3/36 (2013.01); G09G 2330/04 (2013.01);
Abstract

An electrostatic protection circuit of a display panel includes a first P-type thin film transistor having a gate connected to a high potential electrostatic output line and a drain connected to a high potential electrostatic output line, a second P-type thin film transistor having a gate connected to a high potential electrostatic output line and a drain connected to a source of the first P-type thin film transistor, and a source connected to the electrostatic signal input line; a first N-type thin film transistor having a gate connected to the low potential electrostatic output line, and a drain connected to the low potential electrostatic output line; a second N-type thin film transistor having a gate connected to the low potential electrostatic output line and a drain connected to the source of the first N-type thin film transistor, and a source connected to the electrostatic signal input line.


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