The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Dec. 19, 2018
International Business Machines Corporation, Armonk, NY (US);
Rheinisch-westfälische Technische Hochschule (Rwth) Aachen, Aachen, DE;
Vara S. P. Jonnalagadda, Wallisellen, CH;
Benedikt J. Kersting, Rueschlikon, CH;
Wabe W. Koelmans, Adliswil, CH;
Martin Salinga, Thalwil, CH;
Abu Sebastian, Adliswil, CH;
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention is directed to a resistive memory device comprising a control unit for controlling a memory cell of the memory device. The memory cell includes a first terminal, a second terminal and a phase change segment comprising a phase-change material. The phase change segment is arranged between the first terminal and the second terminal. The phase change material is antimony. The phase change segment retains an amorphous region during a write operation. The control unit, during the write operation, applies an electrical programming pulse to the terminals to cause a portion of the phase change segment to transition from a crystalline phase to an amorphous phase comprising the amorphous region. A trailing edge duration of the electrical programming pulse is adjusted based on ambient temperature to prevent re-crystallization of the amorphous region. Shorter trailing edge durations are used at increasing ambient temperatures.