The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Apr. 24, 2018
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Ga-Young Ha, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract
An electronic device is provided to include a semiconductor memory which includes one or more variable resistance elements, wherein each variable resistance element may include a Magnetic Tunnel Junction (MTJ) structure including a free layer having a changeable magnetization direction, a pinned layer having a fixed magnetization direction and a tunnel barrier layer interposed between the free layer and the pinned layer; and a sidewall spacer disposed on a sidewall of the variable resistance element and including an amorphous silicon.