The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Mar. 28, 2017
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Sang Youl Lee, Seoul, KR;

Chung Song Kim, Seoul, KR;

Ji Hyung Moon, Seoul, KR;

Sun Woo Park, Seoul, KR;

June O Song, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 25/16 (2006.01); H01L 29/772 (2006.01); H01L 29/423 (2006.01); G08C 23/04 (2006.01); H01L 29/66 (2006.01); G09G 3/22 (2006.01); G09G 3/3258 (2016.01); G09G 3/3266 (2016.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); G08C 23/04 (2013.01); G09G 3/22 (2013.01); G09G 3/3258 (2013.01); G09G 3/3266 (2013.01); H01L 25/167 (2013.01); H01L 27/1214 (2013.01); H01L 29/41733 (2013.01); H01L 29/423 (2013.01); H01L 29/42384 (2013.01); H01L 29/66969 (2013.01); H01L 29/772 (2013.01); H01L 27/156 (2013.01);
Abstract

A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.


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