The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jan. 17, 2019
Applicant:
Exalos Ag, Schlieren, CH;
Inventors:
Marco Malinverni, Schlieren, CH;
Marco Rossetti, Schlieren, CH;
Antonino Francesco Castiglia, Schlieren, CH;
Nicolas Pierre Grandjean, Schlieren, CH;
Assignee:
EXALOS AG, Schlieren, CH;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01S 5/042 (2006.01); H01S 5/30 (2006.01); H01S 5/183 (2006.01); H01S 5/223 (2006.01); H01S 5/323 (2006.01); H01S 5/20 (2006.01);
U.S. Cl.
CPC ...
H01L 33/14 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/325 (2013.01); H01S 5/0421 (2013.01); H01S 5/3013 (2013.01); H01S 5/3063 (2013.01); H01L 33/007 (2013.01); H01L 33/145 (2013.01); H01S 5/18341 (2013.01); H01S 5/2068 (2013.01); H01S 5/2231 (2013.01); H01S 5/305 (2013.01); H01S 5/3095 (2013.01); H01S 5/32341 (2013.01); H01S 2304/04 (2013.01);
Abstract
A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light emitting diode or laser. On top of the p-type layer there is arranged an n+ or n++-type layer of a group III-nitride, which is transparent to the light emitted from the underlying semiconductor structure and of sufficiently high electrical conductivity to provide lateral spreading of injection current for the light-emitting semiconductor structure.