The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Nov. 08, 2018
Applicant:
Wooriro Co., Ltd., Gwangju, KR;
Inventors:
Chan Yong Park, Gwangju, KR;
Seoung Hwan Park, Daegu, KR;
Assignee:
WOORIRO CO., LTD., Gwangju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/0352 (2006.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); H01L 31/03048 (2013.01); H01L 31/035236 (2013.01);
Abstract
An avalanche photodiode includes: a first contact layer; a light absorbing layer located on the first contact layer and having a multi-quantum well structure; a first electric field control layer located on the light absorbing layer; and a carrier multiplication layer located on the first electric field control layer. At least one of the multi-quantum well structure includes a well layer that includes GaAlN (0≤X≤0.3), and a barrier layer that includes GaAlN (0.7≤X≤1) and a doping portion doped with a p-type dopant.