The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Dec. 20, 2016
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Kazuhiro Suzuki, Minato, JP;
Risako Ueno, Meguro, JP;
Hiroto Honda, Yokohama, JP;
Koichi Ishii, Kawasaki, JP;
Toshiya Yonehara, Kawasaki, JP;
Hideyuki Funaki, Shinagawa, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01S 17/00 (2006.01); H01L 31/107 (2006.01); G01S 17/08 (2006.01); G01S 17/89 (2020.01); H01L 31/18 (2006.01); H01L 31/028 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1075 (2013.01); G01S 17/08 (2013.01); G01S 17/89 (2013.01); H01L 31/02027 (2013.01); H01L 31/0284 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01);
Abstract
A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.