The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Apr. 20, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Sundararajan Balasekaran, Osaka, JP;
Hiroshi Inada, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
An infrared detecting semiconductor device comprises: an optical absorbing layer of type-II disposed between first conductivity-type and second conductivity-type semiconductor layers; and an optical filtering film of n-type InGaAs having an n-type dopant concentration larger than 8×10cm. The optical filtering film includes first to third semiconductor regions, which are sequentially arranged in a direction of a first axis on the optical filtering film. The first semiconductor region has an n-type dopant concentration of 2.0×10cmor more. The third semiconductor region has a n-type concentration of 3.0×10cmor less. The second semiconductor region has an n-type dopant profile monotonically changing from a first dopant concentration at a boundary between the first and second semiconductor regions to a second dopant concentration at a boundary between the second and third semiconductor regions. The first dopant concentration is greater than the second dopant concentration.