The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Sep. 04, 2018
Applicant:

Nuvoton Technology Corporation, Hsinchu Science Park, TW;

Inventors:

Vinay Suresh, Bangalore, IN;

Po-An Chen, Toufen, TW;

Assignee:

NUVOTON TECHNOLOGY CORPORATION, Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/808 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/808 (2013.01); H01L 29/0692 (2013.01); H01L 29/0843 (2013.01); H01L 29/41758 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first conductivity type; a deep well region disposed on the semiconductor substrate, and having a second conductivity type opposite to the first conductivity type; a first well region and a second well region disposed in the deep well region and having the first conductivity type, wherein the first well region and the second well region are separated by a portion of the deep well region, and the first well region is electrically connected to the second well region; and a first doped region and a second doped region disposed in the deep well region and having the second conductivity type, wherein the first well region and the second well region are located between the first doped region and the second doped region.


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