Field effect transistor and manufacturing method thereof

Abstract

A field effect transistor and a manufacturing method thereof are provided. The field effect transistor includes two top gate structures (C andD) and two bottom gate structures (A andB). The top gate structures (C andD) and the bottom gate structures (A andB) are opposite to each other in pair. This increases a quantity of control-voltage-induced carriers in the field effect transistor, and therefore increases an output current of the field effect transistor, improves a power gain limit frequency in high-frequency use, and makes an electric field between the top gate structures (C andD) and the bottom gate structures (A andB) more adequately cover a channel layer () between source structures (and) and a drain (), thereby reducing a parasitic effect in a high frequency, and further improving a frequency characteristic of the field effect transistor.