The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Feb. 26, 2018
Applicant:

National Applied Research Laboratories, Taipei, TW;

Inventors:

Wen-Hsien Huang, Hsinchu, TW;

Jia-Min Shieh, Hsinchu, TW;

Chang-Hong Shen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 23/538 (2006.01); H01L 23/498 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 21/02686 (2013.01); H01L 21/324 (2013.01); H01L 23/49855 (2013.01); H01L 23/5387 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01); H01L 27/1218 (2013.01); H01L 29/42384 (2013.01);
Abstract

A flexible substrate structure including a flexible substrate, a first dielectric layer, a metal-containing layer and a second dielectric layer is provided. The first dielectric layer is located on the flexible substrate. The metal-containing layer has a reflectivity greater than 15% and a heat transfer coefficient greater than 2 W/m-K. The metal-containing layer is disposed between the first dielectric layer and the second dielectric layer, and the second dielectric layer is an inorganic material layer. A flexible transistor including the above-mentioned flexible substrate structure and a method for fabricating the same are also provided.


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