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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10600891 B1

PDFFull Text
Date of Patent:
Mar. 24, 2020

Filed:

Mar. 28, 2019

Smoothing surface roughness of iii-v semiconductor fins formed from silicon mandrels by regrowth

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tze-Chiang Chen, Yorktown Heights, NY (US);

Cheng-Wei Cheng, White Plains, NY (US);

Sanghoon Lee, Mohegan Lake, NY (US);

Effendi Leobandung, Stormville, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Tu-Tu V Ho

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 21/033 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); H01L 21/02164 (2013.01); H01L 29/1054 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/78684 (2013.01); H01L 21/02592 (2013.01); H01L 21/0334 (2013.01); H01L 21/823431 (2013.01);
Abstract

A method of forming a III-V semiconductor vertical fin is provided. The method includes forming a fin mandrel on a substrate, forming a spacer layer on the substrate surrounding the fin mandrel, forming a wetting layer on each of the sidewalls of the fin mandrel, forming a fin layer on each of the wetting layers, removing the fin mandrel, removing the wetting layer on each of the fin layers, and forming a fin layer regrowth on each of the sidewalls of the fin layers exposed by removing the wetting layer from each of the fin layers.

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