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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10600880 B1

PDFFull Text
Date of Patent:
Mar. 24, 2020

Filed:

Jul. 05, 2018

Semiconductor device and method for manufacturing the same

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Tsutomu Kiyosawa, Toyama, JP;

Yasuyuki Yanase, Osaka, JP;

Kazuhiro Kagawa, Kanagawa, JP;

Assignee:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Thanh T Nguyen

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 23/544 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/04 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02579 (2013.01); H01L 21/049 (2013.01); H01L 21/205 (2013.01); H01L 21/3247 (2013.01); H01L 23/544 (2013.01); H01L 29/045 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 29/7828 (2013.01); H01L 21/0485 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A semiconductor device includes a substrate having a main surface inclined in an off-direction from a {0001} surface, and a semiconductor layer. The semiconductor layer includes a level difference for alignment mark. An epitaxial layer is disposed on a first portion of the main surface, the first portion being situated on an off-angle upstream side of the level difference, and on a second portion of the main surface, the second portion being situated on an off-angle downstream side of the level difference. A value of |WL−WR| is 1 μm or less, in which WL represents a distance from a center of the level difference to a boundary between an off-angle upstream side corner portion of the level difference and a main surface or a {0001} facet plane generated on the main surface, and WR represents a distance from the center of the level difference to a boundary between an off-angle downstream side corner portion of the level difference and the main surface or the {0001} facet plane generated on the main surface.

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