The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Oct. 11, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shinya Kyogoku, Nagareyama, JP;

Ryosuke Iijima, Setagaya, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/06 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/0465 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/42368 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/1608 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, a first electrode, and a first insulating film. The first semiconductor region includes a first partial region and a second partial region. The second semiconductor region is separated from the first partial region. The third semiconductor region is provided between the first partial region and the second semiconductor region. The third semiconductor region includes a third partial region and a fourth partial region. The first electrode is separated from the second partial region and is separated from the second semiconductor region and the third semiconductor region. The first insulating film includes a first insulating region and a second insulating region. The fourth semiconductor region includes a first portion. The first portion is provided between the fourth partial region and at least a portion of the first insulating film.


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