The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Feb. 13, 2017
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Tsung-Hsiung Lee, Taoyuan, TW;

Chun-Ting Yang, New Taipei, TW;

Ho-Chien Chen, Keelung, TW;

Yu-Ting Wei, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 21/74 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 21/743 (2013.01); H01L 21/76283 (2013.01); H01L 29/0649 (2013.01); H01L 29/1083 (2013.01); H01L 29/1087 (2013.01); H01L 29/66681 (2013.01); H01L 29/7824 (2013.01); H01L 21/26586 (2013.01);
Abstract

The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor-on-insulator (SOI) substrate having a bottom substrate, a buried oxide layer disposed on the bottom substrate, and a semiconductor layer disposed on the buried oxide layer. The semiconductor structure further includes a doped layer embedded in the semiconductor layer and above the buried oxide layer, and a contact structure extending into the semiconductor layer from the top surface of the semiconductor layer. The contact structure is electrically connected to the doped layer.


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