The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Oct. 08, 2019
Applicant:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Inventor:
Zih-Song Wang, Taoyuan, TW;
Assignee:
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11582 (2017.01); H01L 27/1157 (2017.01); H01L 21/765 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 21/765 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11582 (2013.01); H01L 23/552 (2013.01);
Abstract
A manufacturing method of a non-volatile memory structure including the following steps is provided. Memory cells are formed on a substrate. An isolation layer is formed between the memory cells. A shield electrode is formed on the isolation layer. The shield electrode is electrically connected to a source line.