The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Jan. 02, 2019
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;

Inventor:

Takaya Nagai, Toyota, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/861 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/41708 (2013.01); H01L 29/4236 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01);
Abstract

A semiconductor device may include a semiconductor substrate. A semiconductor substrate may include a diode region and an IGBT region provided adjacent to the diode region. The IGBT region may include a plurality of first conductive-type low concentration regions provided between a buffer region and a collector region, arranged with intervals therebetween in a direction parallel to the semiconductor substrate, and having a lower impurity concentration than the collector region. The collector region may include a first contact portion that is in contact with the buffer region between the low concentration regions adjacent to each other.


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