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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10600779 B1

PDFFull Text
Date of Patent:
Mar. 24, 2020

Filed:

Dec. 11, 2017

Semiconductor device, semiconductor device manufacturing method, and power conversion apparatus

Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Ryu Kamibaba, Tokyo, JP;

Masayoshi Tarutani, Tokyo, JP;

Shinya Soneda, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Tony Tran

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 27/07 (2006.01); H01L 29/36 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H02M 7/5387 (2007.01); H02P 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53266 (2013.01); H01L 27/0727 (2013.01); H01L 29/0834 (2013.01); H01L 29/36 (2013.01); H01L 29/401 (2013.01); H01L 29/407 (2013.01); H01L 29/417 (2013.01); H01L 29/456 (2013.01); H01L 29/66136 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01); H02M 7/5387 (2013.01); H02P 27/06 (2013.01); Y02E 10/56 (2013.01);
Abstract

An RC-IGBT includes a first electrode disposed on a first main surface of a semiconductor substrate over a transistor region and a diode region. The semiconductor substrate includes a MOS gate structure on a first main surface side in the transistor region. The RC-IGBT includes: an interlayer dielectric covering a gate electrode of the MOS gate structure, and having a contact hole exposing a semiconductor layer; and a barrier metal disposed in the contact hole. The first electrode enters the contact hole, is in contact with the semiconductor layer of the MOS gate structure through the barrier metal, and is in direct contact with a semiconductor layer in the diode region of the semiconductor substrate.

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