The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Dec. 02, 2015
Ii-vi Optoelectronic Devices, Inc., Warren, NJ (US);
Kenneth Sean Ozard, Middlesex, NJ (US);
II-VI Delaware, Inc., Wilmington, DE (US);
Abstract
This invention minimizes the thermal resistance and maximizes the power density of a power transistor by mounting the transistor in flip-chip fashion on a heat sink/heat spreader and conducting the heat from the active semiconductor layer through the heat sink/heat spreader (as opposed to through the low conductivity substrate). Illustratively, the semiconductor device package comprises: a high electron mobility transistor (HEMT) formed in a layer of Gallium Nitride (GaN) having a first major surface; at least one metal contact pad making thermal contact with the layer of GaN on its first major surface; a heat sink/heat spreader in electrical and thermal contact with the contact pad(s) on the first surface; and a substrate on which the heat sink is mounted.