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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10600651 B1

PDFFull Text
Date of Patent:
Mar. 24, 2020

Filed:

Dec. 07, 2015

Method for manufacturing epitaxial silicon wafer and vapor phase growth device

Applicant:

Sumco Corporation, Tokyo, JP;

Inventors:

Masayuki Tsuji, Tokyo, JP;

Akihiko Shimizu, Tokyo, JP;

Tomokazu Nishimura, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:

Greenblum & Bernstein, P.L.C.

Primary Examiner:

Robert M Kunemund

Int. Cl.
CPC ...
C30B 25/02 (2006.01); H01L 21/20 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); C30B 35/00 (2006.01); C23C 16/44 (2006.01); C23C 16/46 (2006.01); C30B 29/06 (2006.01); H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
H01L 21/20 (2013.01); C23C 16/4401 (2013.01); C23C 16/46 (2013.01); C30B 25/02 (2013.01); C30B 29/06 (2013.01); C30B 35/00 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/3221 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/02532 (2013.01);
Abstract

A vapor deposition apparatus includes an exhaust regulator provided in an exhaust pipe to regulate exhaust of the reaction chamber and including: a hollow frustum upstream baffle having a larger first opening near a reaction chamber than a second opening near an exhaust device; and a hollow frustum downstream baffle provided near the exhaust device with respect to the upstream baffle and having a larger third opening near the reaction chamber than a fourth opening near the exhaust device. The upstream baffle and downstream baffle are designed so that B/A and C/A are 0.33 or less, at least one of B/A and C/A is 0.26 or less, and (B+C)/A is 0.59 or less, where an inner diameter of the exhaust pipe and diameters of the first and third openings are A, a diameter of the second opening is B and a diameter of the fourth opening is C.

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