The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jul. 12, 2018
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Xiao Liu, Fairfax, VA (US);
Battogtokh Jugdersuren, Alexandria, VA (US);
Abstract
Processes for fabricating multi- and monolayer silicene on catalyst metal surfaces by means of plasma-enhanced chemical vapor deposition (PECVD). Silicene is grown by means of PECVD from a starting mixture of Hand SiHhaving an H:SiHratio of 100 to 400 on an Ag(111) substrate having a substrate temperature between 20° C. and 290° C., with the deposition being performed for about 10-25 minutes at an RF power between 10 W and 500 W and under a chamber pressure between about 100 mTorr and 1300 mTorr. In most cases, the substrate will be in the form of an Ag(111) film sputtered on a fused silica substrate. A multi-layer silicene film can be formed by extending the deposition time past 25 minutes.