The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Apr. 24, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Ye Lu, San Diego, CA (US);

Haitao Cheng, San Diego, CA (US);

Chao Song, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01G 4/10 (2006.01); H01L 23/522 (2006.01); H01G 4/01 (2006.01);
U.S. Cl.
CPC ...
H01G 4/10 (2013.01); H01G 4/01 (2013.01); H01L 23/5223 (2013.01); H01L 2924/3011 (2013.01);
Abstract

Methods, systems, and devices for a finger metal-on-metal (FMOM) capacitor including a negative capacitance material are described. In one examples, a FMOM capacitor may include a first electrode and a second electrode. The FMOM capacitor may include a dielectric layer coating a first sidewall of the first electrode and a second sidewall of a second electrode. A portion of the first sidewall may be substantially parallel to a portion of the second sidewall. The FMOM capacitor may also include a negative capacitance material disposed in a channel between the first sidewall of the first electrode and the second sidewall of the second electrode. The negative capacitance material may extend in a direction that is substantially parallel to the portion of the first sidewall and the portion of the second sidewall.


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