The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Feb. 13, 2018
Applicant:

Barefoot Networks, Inc., Santa Clara, CA (US);

Inventors:

Anurag Agrawal, Santa Clara, CA (US);

Alain Loge, Mountain View, CA (US);

Assignee:

Barefoot Networks, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 13/40 (2006.01); H03K 17/81 (2006.01);
U.S. Cl.
CPC ...
G06F 13/4072 (2013.01); H03K 17/81 (2013.01); G06F 2217/64 (2013.01);
Abstract

Some embodiments of the invention provide a novel method and chip design for a forwarding chip, that decouples input-output (IO) technology requirements from the technology used in a high bandwidth switching ASIC. In some embodiments, a main die including a latest generation switching chip is coupled to a set of IO dies (e.g., SerDes dies). The main die, in some embodiments, uses a latest technology (e.g., 7 nm nodes) while the IO dies, in some embodiments, use a more mature technology (e.g., 16 nm nodes). Some embodiments provide multiple IO dies that each provide connectivity to external components to the high bandwidth switching ASIC (e.g., a core ASIC die). The multiple dies are mounted on a silicon interposer, in some embodiments, using microbumps to make the connections between the dies and the silicon interposer. Additional connections to the pad are made from each die including to general purpose input-output (GPIO) connections. In some embodiments, the main die and the IO dies make all connections through microbumps on the silicon interposer and some microbumps connect to external components using through-silicon vias (TSVs). The microbumps of the main die, in some embodiments, are arranged so that they are mirrored on either side of the main die and rotationally invariant under a 180 degree rotation. IO dies, in some embodiments, are mounted in a first orientation to connect to a first side of the main die and a second rotated (by 180 degrees) orientation to connect to a second opposite side of the main die.


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