The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2020

Filed:

Feb. 16, 2017
Applicants:

Samsung Display Co., Ltd, Yongin-si, Gyeonggi-do, KR;

Postech Academy-industry Foundation, Pohang-si, Gyeongsangbuk-do, KR;

Inventors:

Sang Hwan Cho, Suwon-si, KR;

Jong Lam Lee, Pohang-si, KR;

Chung Sock Choi, Seoul, KR;

So Young Lee, Suwon-si, KR;

Sun Young Jung, Suwon-si, KR;

Illhwan Lee, Pohang-si, KR;

Ki Ryong Jeong, Pohang-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/01 (2006.01); G02F 1/1523 (2019.01); G02F 1/1506 (2019.01); E06B 3/67 (2006.01); E06B 9/24 (2006.01); G02F 1/155 (2006.01); G02F 1/157 (2006.01); G02F 1/163 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1523 (2013.01); E06B 3/6722 (2013.01); E06B 9/24 (2013.01); G02F 1/155 (2013.01); G02F 1/1506 (2013.01); G02F 1/157 (2013.01); G02F 1/163 (2013.01); E06B 2009/2417 (2013.01); E06B 2009/2464 (2013.01); G02F 2202/36 (2013.01);
Abstract

The present disclosure provides a smart window including a first base layer and a second base layer positioned to face each other; a first conductive layer and a second conductive layer respectively positioned at inner surfaces of the first base layer and the second base layer; and an electrolyte layer interposed between the first conductive layer and the second conductive layer, wherein the first conductive layer includes a plurality of first nanostructures, and the second conductive layer includes a plurality of second nanostructures having a different average length from the plurality of first nanostructures.


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