The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
Jan. 07, 2019
Applicant:
Satoshi Mizukami, Kanagawa, JP;
Inventor:
Satoshi Mizukami, Kanagawa, JP;
Assignee:
Ricoh Company, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05B 11/04 (2006.01); H01L 41/09 (2006.01); B41J 2/16 (2006.01); B05B 12/08 (2006.01); H01L 41/187 (2006.01); H01L 27/20 (2006.01); H01L 41/053 (2006.01); H01L 41/08 (2006.01); H01L 41/047 (2006.01); B41J 2/14 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); H01L 41/257 (2013.01); H01L 41/23 (2013.01);
U.S. Cl.
CPC ...
B05B 11/048 (2013.01); B05B 12/088 (2013.01); B41J 2/14233 (2013.01); B41J 2/1607 (2013.01); B81B 3/0021 (2013.01); B81B 3/0037 (2013.01); B81C 1/00365 (2013.01); H01L 27/20 (2013.01); H01L 41/0478 (2013.01); H01L 41/0533 (2013.01); H01L 41/0815 (2013.01); H01L 41/0973 (2013.01); H01L 41/1876 (2013.01); B41J 2002/14258 (2013.01); B41J 2202/03 (2013.01); B81C 1/00666 (2013.01); B81C 2201/0164 (2013.01); B81C 2201/0167 (2013.01); H01L 41/0471 (2013.01); H01L 41/0472 (2013.01); H01L 41/23 (2013.01); H01L 41/257 (2013.01);
Abstract
An actuator includes a diaphragm, a lower electrode on the diaphragm, an electromechanical transducer film on the lower electrode, and an upper electrode on the electromechanical transducer film. The diaphragm includes a first silicon oxide film having a thickness of 0.5 μm or more, a silicon layer on the first silicon oxide film, a thickness of which is 3 μm or more, and a second silicon oxide film on the silicon layer, a thickness of which is 0.5 μm or more. A volume resistivity of the silicon layer is 10Ω·cm or more and 10Ω·cm or less.