The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

May. 09, 2016
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Shin Iwabuchi, Kanagawa, JP;

Makoto Motoyoshi, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/378 (2011.01); H01L 27/146 (2006.01); H04N 5/225 (2006.01); H01L 23/48 (2006.01); H04N 5/374 (2011.01); H04N 5/369 (2011.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01); H01L 27/115 (2017.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H01L 23/481 (2013.01); H01L 24/16 (2013.01); H01L 25/18 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14638 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H04N 5/2253 (2013.01); H04N 5/374 (2013.01); H04N 5/379 (2018.08); H01L 27/115 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/13 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16237 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1425 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/1443 (2013.01);
Abstract

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.


Find Patent Forward Citations

Loading…