The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Dec. 12, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Hiromichi Takaoka, Hitachinaka, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04L 9/32 (2006.01); H04L 9/08 (2006.01); G09C 1/00 (2006.01); H03K 3/84 (2006.01);
U.S. Cl.
CPC ...
H04L 9/3278 (2013.01); G09C 1/00 (2013.01); H03K 3/84 (2013.01); H04L 9/0866 (2013.01); H04L 9/3242 (2013.01);
Abstract
A semiconductor device includes a first field effect transistor and a second field effect transistor which are respectively coupled to gate electrodes. An insulation property of a gate insulating film of the first field effect transistor is broken down. A resistance value of the gate insulating film of the second field effect transistor is greater than a resistance value of the gate insulating film of the first field effect transistor.
Takaoka, Hiromichi. (2020). Semiconductor device (U.S. Patent No. 10594497). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10594497
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile