The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2020

Filed:

Dec. 21, 2017
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Yu Liu, Beijing, CN;

Dongliang Yang, Beijing, CN;

Xin Xie, Beijing, CN;

Haoyang Xing, Beijing, CN;

Kai Wang, Beijing, CN;

Chunlai Xiao, Beijing, CN;

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/42 (2006.01); H01P 5/10 (2006.01); H01F 27/28 (2006.01); H01F 17/00 (2006.01); H01F 27/40 (2006.01); H01F 27/29 (2006.01);
U.S. Cl.
CPC ...
H03H 7/42 (2013.01); H01F 17/0013 (2013.01); H01F 17/0033 (2013.01); H01F 27/2804 (2013.01); H01F 27/29 (2013.01); H01F 27/40 (2013.01); H01F 2027/2809 (2013.01);
Abstract

The present invention provides a planar balun and a multi-layer circuit board. The planar balun formed on the multi-layer circuit board comprises: a first winding with at least one turn, which is formed in a first conductive layer, and has a first lead and a second lead serving as a first balanced end and a second balanced end of the balun respectively; a second winding with at least one turn, which is formed in a second conductive layer separated from the first conductive layer by at least a first insulating layer, and has a third lead and a fourth lead, wherein the third lead is connected to a ground potential, and the fourth lead serves as an unbalanced end of the balun; and a first balancing capacitor, which is connected between a selected portion near a center of the first winding and the ground potential.


Find Patent Forward Citations

Loading…